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Impurity - Dislocation Interactions in MBE Silicon

Published online by Cambridge University Press:  28 February 2011

E C Sidebotham ,
B Hamilton ,
C J Gibbings  and
C G Tuppen
E C Sidebotham
Affiliation:
Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, PO Box 88, Manchester M60 1QD, England.
B Hamilton
Affiliation:
Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, PO Box 88, Manchester M60 1QD, England.
C J Gibbings
Affiliation:
British Telecom Research Laboratories, Martlesham Heath, Ipswich, IPS 7RE, England.
C G Tuppen
Affiliation:
Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, PO Box 88, Manchester M60 1QD, England.
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Abstract

The interaction between impurity species and dislocations is an area of tremendous importance both from a scientific viewpoint and from the need to understand gettering mechanisms. Low temperature gettering will be a vital tool for future VLSI requirements. However, the direct and unambiguous measurement of point defects gettered onto dislocations isdifficult.

We have made a systematic DLTS study of a deep level which is clearly related to dislocations. The measurements were made in silicon deposited by molecular beam epitaxy (MBE). This near mid-gap state appears to result from the complexing of an impurity or defect with the dislocation. In silicon with relatively high dislocation densities we observe classical DLTS spectra. As the dislocation density becomes low we see clear evidence of “crowding” of the gettered impurities; even though the total number of defects is not high the local concentration near the dislocation causes spectral distortion. We are able to model these spectral anomalies by observing detailed capacitance transients.

In this paper we aim to present an overall description of the electronic properties of the gettered impurity or defect. The insight that this gives into gettering mechanisms isalso discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 239
Copyright
Copyright © Materials Research Society 1989

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References

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