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Impurity Diffusion in SiGe Alloys: Strain and Composition Effects

Published online by Cambridge University Press:  10 February 2011

Arne Nylandsted Larsen
Arne Nylandsted Larsen*
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C, Denmark
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Abstract

The advent of epitaxial-growth techniques dedicated to the growth of epitaxial layers of group-IV semiconductors and their alloys has opened up new possibilities for novel types of diffusion experiments and thus for critical tests of existing diffusion theories. It is now possible to grow test structures for diffusion consisting of well-defined narrow distributions of tracer impurities in epitaxial layers of biaxial-strained or relaxed alloys of different compositions. This enables studies of alloy effects and/or strain effects on diffusion with varying strain energy for a well-defined type of strain (tensile or compressive). A review is presented on recently published results on impurity diffusion in strained and relaxed, epitaxial SiGe alloy layers. As almost all these studies have focused on boron and antimony diffusion, these two impurities will have the leading roles in this review.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 527: Symposium Z – Diffusion Mechanisms in Crystalline Materials , 1998 , 357
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] see e.g. Properties of Strained and Relaxed Silicon Germanium (Edited by Kasper, Erich)(emis Datareviews Series no.12, INSPEC, London, 1995)Google Scholar
[2] Hull, H. in reference 1, p.17Google Scholar
[3] Baumann, F.H., Huang, J-H., Rentschler, J.A., Chang, T.Y., and Ourmazd, A., Phys.Rev.Lett. 73,448 (1994)Google Scholar
[4]. Fahey, P.M., Griffin, P.B., and Plummer, J.D., Reviews of Modern Physics, 61 289 (1989).Google Scholar
[5] see e.g. GeSi Strained Layers and their applications, edited by Stoneham, A.M. and Jain, S.C. (Institute of Physics Publishing, Bristol and Philadelphia 1995)Google Scholar
[6] Legoues, F.K., Meyerson, B.S., and Morar, J.F., Phys.Rev.Lett. 22 2903 (1991)Google Scholar
[7] Cowern, N.E.B., Zalm, P.C., Sluis, P. van der, Gravensteijn, D.J., and Boer, W.B. de, Phys. Rev.Lett., 72 2585 (1994)Google Scholar
[8] Fitzgerald, E.A., Xie, Y.-H, Monroe, D., Silverman, P.J., Kuo, J.M., Kortan, A.R., Theil, F.A., and Weir, B.E., J. Vac. Sci. Technol. B 10 1807 (1992).Google Scholar
[9] Kuo, P., Hoyt, J.L., Gibbons, J.F., Turner, J.E., and Lefforge, D., Appl.Phys.Lett. 66, 580 (1995).Google Scholar
[10] Kringhøj, P., Larsen, A. Nylandsted, and Shiryaev, S.Yu., Phys.Rev.Lett. 76 3372 (1996)Google Scholar
[11] Frank, W., Gösele, U., Mehrer, H., and Seeger, A., in: Murch, G.E. and Nowick, A.S.. Diffusion in crystalline Solids (Academic, New York 1984) p 63.Google Scholar
[12] Moriya, N., Feldman, L.C., Luftman, H.S., King, C.A., Bevk, J., and Freer, B., Phys.Rev. Lett., 71 883 (1993)Google Scholar
[13] Kuo, P., Hoyt, J.L., Gibbons, J.F., Tumer, J.E., Jacowitz, R.D., and Kamins, T.I., Appl.Phys.Lett. 62 612 (1993)Google Scholar
[14] Loechelt, G.H., Lam, G., Steele, J.W., Knoch, L.K., Klein, K.M., Watanabe, J.K., and Christiansen, J.W., J.Appl.Phys. 74 5520 (1993)Google Scholar
[15] Kuo, P., Hoyt, J.L., Gibbons, J.F., Tumer, J.E., and Lefforge, D., Appl.Phys.Lett. 67 706 (1995)Google Scholar
[16] Fang, W.T.C., Griffin, P.B., and Plummer, J.D., Mat.Res.Soc.Symp.Proc. 379 379 (1995)Google Scholar
[17] Fang, T.T., Fang, W.T.C., Griffin, P.B., and Plummer, J.D., Appl.Phys.Lett. 68 791 (1996)Google Scholar
[18] Kuo, P., Hoyt, J.L., Gibbons, J.F., Tumer, J.E., and Lefforge, D., Mat.Res.Soc.Symp.Proc. 379 373 (1995)Google Scholar
[19] Lever, R.F., Bonar, J.M., and Willoughby, A.F.W., J.Appl.Phys. 83, 1988 (1998)Google Scholar
[20] Paine, A.D.N., Willoughby, A.F.W., Morooka, M., Bonar, J.M., Phillips, P., Dowsett, M.G., and Cooke, G., Defect and Diffusion Forum 143–147 1131 (1997)Google Scholar
[21] Aziz, M.J., Appl.Phys.Lett. 70 2810 (1997)Google Scholar
[22] Sugino, O. and Oshiyama, A., Phys.Rev. B 46 12335 (1992)Google Scholar
[23] Larsen, A. Nylandsted and Kringhøj, P., Appl.Phys.Lett. 68 2684 (1996)Google Scholar
[24] Mathiot, D. and Dupuy, J.C., Mat. Science Forum 83–87 1303 (1992)Google Scholar