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Impurity Diffusion During RTA

Published online by Cambridge University Press:  25 February 2011

R.B. Fair
R.B. Fair*
Affiliation:
Microelectronics Center of North Carolina, Research Triangle Park, North Carolina 27709
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Abstract

Enhanced dopant diffusion during RTA depends upon whether the following physical phenomena occur individually or in combination: (1) amorphization of the Si, (2) damage-induced dislocation formation, (3) damage annealing, (4) self-interstitial trapping, (5) solubility enhancement. RTA of B in crystalline or preamorphized Si presents significantly different environments for enhanced diffusion. In preamorphized Si, enhanced B diffusion is modeled as increased B solubility following SPE. In addition, a different intrinsic diffusivity is observed which corresponds to B diffusion in preamorphized Si. Anomalous diffusion of B and As from high dose implants can be modeled with the same mechanism -- self-interstitial trapping following SPE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 381
Copyright
Copyright © Materials Research Society 1985

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References

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