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Impurities in Bulk A-Si:H, Silicon Nitride, and at the a-Si:H/Silicon Nitride Interface

Published online by Cambridge University Press:  21 February 2011

C. C. Tsai
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
M. J. Thompson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
H. C. Tuan
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

Major impurities in a-Si:H are O, C and N, while those in silicon nitride are H, O, C, F, Cl and excess Si. We show that a large reduction in both contaminant impurities and cross contamination achieved in the UHV plasma deposition system yields high purity a-Si:H. The impurity at the a-Si:H/nitride interface is observed to depend strongly on the order of deposition. There is a large amount of nitrogen carried over into a-Si:H when the a-Si:H is deposited after the nitride, Such a compositional asymmetry is likely to lead to an asymmetry in interface characteristics.

Type
Research Article
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. For example, see Tuan, H.C., this conference.Google Scholar
2. Abeles, B. and Tiedje, T., Phys. Rev. Lett. 51, 2003 (1983).CrossRefGoogle Scholar
3. Tsai, C.C., Knights, J.C., Lujan, R.A., Wacker, B., Stafford, B.L. and Thompson, M.J., J. Non-cryst. Solids, 59 & 60, 731 (1983).Google Scholar
4. Delahoy, A. and Griffith, R.W., J. Appl. Phys. 52, 6337 (1981).Google Scholar
5. Tsuji, O. and Tatsuta, T., in: Proceedings of the 6th International Symposium on Plasma Chemistry, Vol.3, eds. Boulons, M.I. and Munz, R.J., pp.782786 (1983).Google Scholar
6. Street, R.A. and Thompson, M.J., to be published.Google Scholar