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Impurities in Bulk A-Si:H, Silicon Nitride, and at the a-Si:H/Silicon Nitride Interface

Published online by Cambridge University Press:  21 February 2011

C. C. Tsai ,
M. J. Thompson  and
H. C. Tuan
C. C. Tsai
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
M. J. Thompson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
H. C. Tuan
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

Major impurities in a-Si:H are O, C and N, while those in silicon nitride are H, O, C, F, Cl and excess Si. We show that a large reduction in both contaminant impurities and cross contamination achieved in the UHV plasma deposition system yields high purity a-Si:H. The impurity at the a-Si:H/nitride interface is observed to depend strongly on the order of deposition. There is a large amount of nitrogen carried over into a-Si:H when the a-Si:H is deposited after the nitride, Such a compositional asymmetry is likely to lead to an asymmetry in interface characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 297
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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