Hostname: page-component-848d4c4894-8bljj Total loading time: 0 Render date: 2024-07-03T00:31:20.387Z Has data issue: false hasContentIssue false

Improving GaAs Chip yield And Enhancing Reliability of GaAs Devices

Published online by Cambridge University Press:  17 March 2011

Kanti Prasad*
Affiliation:
Professor, Electrical and Computer Engineering Department, Director, Microelectronics/VLSI Technology. University of Massachusetts Lowell, MA 01854, Kanti_Prasad@uml.edu
Get access

Abstract

The purpose of this research is to improve GaAs yield and enhance the reliability of GaAs MMICs (Monolithic Microwave Integrated Circuits) by first understanding the physical mechanisms of GaAs, Ni,Au-Ge eutectic and Au alloying process. Ohmic ooze has been driving force for this research. Variety of innovative experiments has been designed, so that contact resistance may be guaranteed to be within the permissible range. This resulted into the development of analytical techniques to measure contact resistance to GaAs as a result of alloying process employing Ni,Au-Ge and Au.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Look, David C., Electrical Characterization of GaAs Materials and Device John Wiley and Sons, 1989.Google Scholar
2. Kuan, T.S., Satson, P.E., Jackson, T.N.. Rupprecht, H., Wilkie, E.I.. ‘Electron microscope studies of an alloyed Au/Ni/ Au-Ge ohmic contact to GaAs’, J.Appl. Phys. 54 (12), December 1983.Google Scholar
3. Williams, Ralph, Modern GaAs Processing Methods, Artech House, 1990 Google Scholar
4. Murakami, M., Childs, K., Saker, J., Callegari, A.. ‘Microstructure studies of AuNiGe Ohmic contacts to n-type GaAs’, J. Vac.Sci. Technol. S, Vol 4,No 4, Jul/Aug 1986 Google Scholar
5. Shih, Y., Murakami, M., Wilkie, E., Callegari, A.. ‘Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact to n-type GaAs’, J.Appl.Phys. 62 (2), 15 July 1987 Google Scholar
6. Sall, R.. ‘Improvements in the topography of AuGeNi-Sased Ohmic Contacts to n-GaAs’, Thin Solid Films 176 (1989).Google Scholar
7. Sands, T., Keramidas, V., Washburn, J., Gronsky, R.. ‘Structurte and composition of NixGaAs’, Appl.Phys.lett. 48 (6), 10 Feb 1986.Google Scholar
8. Ogawa, M.. ‘Alloying reaction in thin Nickel films deposited on GaAs’, Thin Solid Films, 70 (1980)Google Scholar
9. Haddara, Y.; lee, C., Hu, J., Deal, M., Sravman, J.. ‘Modeling Diffusion in Gallium Arsenide: Recent Work’, MRS Bulletin April 1995.Google Scholar
10. Kawata, H., Oku, T., Otsuki, A., Murakami, M.. ‘NiGe-based ohmic cintacts to n-type GaAs. II. Effects of Au addition’, J.Appl.Phys. 75 (5), 1 March 1994.Google Scholar
11. li, S., Holloway, P.. ‘Regrowth of a GaAs layer for n-GaAs ohmic contacts’, J.Appl.Phys. 71 (9), 1 May 1992.40.Google Scholar