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Improved Spray-Pyrolysis Deposition System for Polycrystalline Conductive SnO2 Thin Films

Published online by Cambridge University Press:  15 February 2011

V. Foglietti
Affiliation:
Istituto di Elettronica dello Stato Solido del CNR Via Cineto Romano 42, 00156 Roma
A. Galbato
Affiliation:
Universita' degli studi di Roma “La Sapienza” e unita' INFM Dip. Ingegneria Elettronica, Via Eudossiana 18, 00185 Roma
A. Bearzotti
Affiliation:
Istituto di Elettronica dello Stato Solido del CNR Via Cineto Romano 42, 00156 Roma
A. Galloppa
Affiliation:
Universita' degli studi di Roma “La Sapienza” e unita' INFM Dip. Ingegneria Elettronica, Via Eudossiana 18, 00185 Roma
P. Maltese
Affiliation:
Universita' degli studi di Roma “La Sapienza” e unita' INFM Dip. Ingegneria Elettronica, Via Eudossiana 18, 00185 Roma
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Abstract

Bismuth-doped tin oxide films have been deposited using a new spray-pyrolysis deposition system. Among the properties are the possibility of depositing thin films over very large areas with good uniformity and the relatively small cost compared with other types of deposition systems. The apparatus is divided in two major parts, the aerosol chamber and the deposition chamber. The deposition chamber consists of a flat rotating hot plate that can house substrates up to 18 cm in diameter. Deposition temperature ranges from 290 °C to 350 °C. The SEM pictures show a phase transition from amorphous to polycrystalline which also strongly affects the transport properties of the film. The high values of the surface resistivity obtained are consistent with those ones required to develop an analog grey scale ferroelectric liquid crystal display. The sample shows a 20% uniformity in the value of surface resistivity over an area of 140 cm2, and the results obtained until now show a satisfactory reproducibility. Bismuth and Tin concentration versus deposition temperature have been determined by ICP mass spectrometry. Our work is supported by the ESPRIT project “PROFELICITA”.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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