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Improved Ohmic Contacts to n-Type GaAs, Using Oiboride Diffusion Barriers
Published online by Cambridge University Press: 26 February 2011
Abstract
Ohmic contacts employing Au/Metal/Au/Ge/Ni (Metal=Ni or. TiB2) to n-type GaAs have been investigated. Alloying of the contacts, performed by both optical (rapid thermal) and strip heater methods, resulted in very low specific contact resistivities for the samples employing the TiB2 diffusion barrier. Such contacts are shown to be stable on aging at 350C for 180 hours.
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- Copyright © Materials Research Society 1986