Hostname: page-component-8448b6f56d-wq2xx Total loading time: 0 Render date: 2024-04-23T15:04:58.377Z Has data issue: false hasContentIssue false
  • English
  • Français

Improved Copper Chemical Vapor Deposition Process by Applying Substrate Bias

Published online by Cambridge University Press:  15 February 2011

Won-Jun Lee ,
Sa-Kyun Rha ,
Seung-Yun Lee ,
Dong-Won Kim ,
Soung-Soon Chun  and
Chong-Ook Park
Won-Jun Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, Korea
Sa-Kyun Rha
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, Korea
Seung-Yun Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, Korea
Dong-Won Kim
Affiliation:
Department of Materials Engineering, Kyonggi University, Suwon, 440-760, Korea
Soung-Soon Chun
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, Korea
Chong-Ook Park
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, Korea
Get access

Abstract

The substrate bias was applied during the chemical vapor deposition (CVD) process of copper in an effort to change the adsorption behaviors of the reactant. Copper films were deposited on TiN and SiO2 from Cu(hfac)(tmvs) with the substrate bias and without one. The surface morphology, the thickness, the sheet resistance and the purity of the films were investigated. When the negative substrate bias of -30 V was applied to the substrate, the deposition rate of copper increased both on TiN and SiO2. No change was observed in the chemical composition of the copper film deposited with substrate bias in comparison with that of the copper film deposited with no bias. It was calculated that Cu(hfac) has the dipole moment whose direction is from copper to hfac. Under the d. c.electric field, dipole tends to align along the poling direction. Resulting from the overlapping population (OP) value analysis, the improvement of deposition rate under negative substrate bias was explained due to the adsorption of copper atom in Cu(hfac) species directly onto the substrate by the electric field applied between the substrate and the gas showerhead.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 207
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Norman, J. A. T., Muratore, B. A., Dyer, P. N., Roberts, D. A., and Hochberg, A. K., in Proceedings of the 8th International IEEE VLSI Interconnection Conference, Santa Clara, June 1991 (IEEE, New York, 1991) p. 123.Google Scholar
2. Jain, A., Gelatos, A. V., Kodas, T. T., Hampden-Smith, M. J., Marsh, R., and Mogab, C. J., Thin Solid Films 262, 52 (1995).Google Scholar
3. Awaya, N., Ohno, K., and Arita, Y., J. Electrochem. Soc. 142 (9), 3173 (1995).Google Scholar
4. Lee, W.–J., Min, J.–S., Rha, S.–K., Kim, D.–W., Chun, S.–S., and Park, C.–O., J. Mater. Sci.: Mater. El. 7 (1996).Google Scholar
5. Girolami, G. S., Jeffries, P. M., and Dubois, L. H., J. Am. Chem. Soc. 115, 1015 (1993).Google Scholar