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Improved Adhesion of P-doped SiO2-Interface Layers on InP by Low-Temperature Damage-Free Plasma-CVD

Published online by Cambridge University Press:  21 February 2011

R. Riemenschneider ,
H.L. Hartnagel  and
H. Kräutle
R. Riemenschneider
Affiliation:
Institute of High Frequency Electronics, Technical University of Darmstadt, Merckstr. 25, 64283 Darmstadt, Germany
H.L. Hartnagel
Affiliation:
Institute of High Frequency Electronics, Technical University of Darmstadt, Merckstr. 25, 64283 Darmstadt, Germany
H. Kräutle
Affiliation:
Research Center Telekom FTZ Am Kavalleriesand 3, 64295 Darmstadt, Germany
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Abstract

The deposition of thin films on III-V compound semiconductors is encountered with various interfacial problems. We present a new approach using a modified plasma technique in a phosphorous ambient at substrate temperatures ranging from 250 to 350 °C which covers two import aspects: Firstly, a good insulator quality due to the plasma process. Secondly, an appropriate surface pre-treatment and defect passivation by a phosphine-like cleaning process using a solid phosphorous source. The analysis of the film adhesion yields improved adhesive properties due to the high activation energy of a plasma process for surface reactions, and by preventing a phosphorus-related defects. The phosphorous concentration in the SiO2 films has to be adapted in order to prevent electrical degradation of the SiO2-InP interface. The influence of phosphorous deficiency and excess phosphorous will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 231
Copyright
Copyright © Materials Research Society 1994

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References

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