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Impact of rapid thermal annealing and hydrogenation on the doping concentration and carrier mobility in solid phase crystallized poly-Si thin films

Published online by Cambridge University Press:  27 June 2011

A. Kumar ,
P.I. Widenborg ,
H. Hidayat ,
Qiu Zixuan  and
A.G. Aberle
A. Kumar
Affiliation:
Solar Energy Research Institute of Singapore, National University of Singapore, Singapore Department of Electrical and Computer Engineering, National University of Singapore, Singapore
P.I. Widenborg
Affiliation:
Solar Energy Research Institute of Singapore, National University of Singapore, Singapore Department of Electrical and Computer Engineering, National University of Singapore, Singapore
H. Hidayat
Affiliation:
Solar Energy Research Institute of Singapore, National University of Singapore, Singapore Department of Electrical and Computer Engineering, National University of Singapore, Singapore
Qiu Zixuan
Affiliation:
Solar Energy Research Institute of Singapore, National University of Singapore, Singapore
A.G. Aberle
Affiliation:
Solar Energy Research Institute of Singapore, National University of Singapore, Singapore Department of Electrical and Computer Engineering, National University of Singapore, Singapore
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Abstract

The effect of the rapid thermal annealing (RTA) and hydrogenation step on the electronic properties of the n+ and p+ solid phase crystallized (SPC) poly-crystalline silicon (poly-Si) thin films was investigated using Hall effect measurements and four-point-probe measurements. Both the RTA and hydrogenation step were found to affect the electronic properties of doped poly-Si thin films. The RTA step was found to have the largest impact on the dopant activation and majority carrier mobility of the p+ SPC poly-Si thin films. A very high Hall mobility of 71 cm2/Vs for n+ poly-Si and 35 cm2/Vs for p+ poly-Si at the carrier concentration of 2×1019 cm-3 and 4.5×1019 cm-3, respectively, were obtained.

Keywords

plasma-enhanced CVD (PECVD) (chemical reaction)dopantHall effect
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a06-01
Copyright
Copyright © Materials Research Society 2011

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References

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