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Impact of Post Deposition Annealing on Characteristics of HfxZr1-xO2

Published online by Cambridge University Press:  31 January 2011

Dina Triyoso ,
Rama H. Hegde ,
Rich Gregory ,
Greg S. Spencer  and
William Taylor Jr.
Dina Triyoso
Affiliation:
dina.triyoso@freescale.com, Freescale Semiconductor Inc., Technology Solutions Organization, 3501 Ed Bluestein Blvd; MD: K10, Austin, Texas, 78721, United States, 512-933-5912, 512-933-6962
Rama H. Hegde
Affiliation:
Rama.Hegde@freescale.com, Freescale Semiconductor Inc., Austin, Texas, United States
Rich Gregory
Affiliation:
ssginaz@cox.net, Freescale Semiconductor Inc., Austin, Texas, United States
Greg S. Spencer
Affiliation:
Greg.Spencer@freescale.com, Freescale Semiconductor Inc., Austin, Texas, United States
William Taylor Jr.
Affiliation:
Bill.Taylor@sematech.org, Freescale Semiconductor Inc., Austin, Texas, United States
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Abstract

In this paper the impact of post deposition annealing in various ambient on electrical properties of hafnium zirconate (HfxZr1-xO2) high-k dielectrics is reported. ALD HfxZr1-xO2 films are annealed in a nitrogen and/or oxygen ambient at 500°C to 1000°C. Devices annealed at 500°C in N2 has lower equivalent oxide thickness (EOT) of 10Å without significant increase in gate leakage (Jg), threshold voltage (Vt) and only a slight decrease in transconductance (Gm) values compared to 500°C O2 annealed devices. Furthermore, the impact of annealing HfxZr1-xO2 films in a reducing ambient (NH3) is studied. Optimized NH3 anneal on HfxZr1-xO2 results in lower CET, improved PBTI, low sub-threshold swing values, comparable high-field Gm with only a minor degradation in peak Gm compared to control HfxZr1-xO2. Finally, the impact of laser annealing vs. RTP annealed HfxZr1-xO2 films are reported. Laser annealing helped further stabilize tetragonal phase of HfxZr1-xO2 without inducing void formation. Good devices with low leakage, low EOT and high mobility are obtained for laser annealed HfxZr1-xO2.

Keywords

atomic layer depositiondielectricinsulator
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1155: Symposium C – CMOS Gate-Stack Scaling–Materials, Interfaces and Reliability Implications , 2009 , 1155-C07-05
Copyright
Copyright © Materials Research Society 2009

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References

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