Hostname: page-component-76fb5796d-9pm4c Total loading time: 0 Render date: 2024-04-27T00:00:02.948Z Has data issue: false hasContentIssue false
  • English
  • Français

Impact of Interfacial Nitridation of HfO2 High-k Gate Dielectric Stack on 4H-SiC

Published online by Cambridge University Press:  01 February 2011

Rajat Mahapatra ,
Amit K. Chakraborty ,
Peter Tappin ,
Bing Miao ,
Alton B. Horsfall ,
Sanatan Chattopadhyay ,
Nick G. Wright  and
Karl S. Coleman
Rajat Mahapatra
Affiliation:
rajat.mahapatra@ncl.ac.uk, Newcastle University, School of Electrical, Electronics and Computer Engineering, Merz Court, Newcastle, Newcastle, NE2 4NB, United Kingdom
Amit K. Chakraborty
Affiliation:
a.k.chakraborty@ncl.ac.uk, University of Durham, Department of Chemistry, South Road, Durham, DH1 3LE, United Kingdom
Peter Tappin
Affiliation:
peter.tappin@ncl.ac.uk, Newcastle University, School of Electrical, Electronics and Computer Engineering, Newcastle, NE1 7RU, United Kingdom
Bing Miao
Affiliation:
bing.miao@ncl.ac.uk, Newcastle University, School of Electrical, Electronics and Computer Engineering, Newcastle, NE1 7RU, United Kingdom
Alton B. Horsfall
Affiliation:
a.b.horsfal@ncl.ac.uk, Newcastle University, School of Electrical, Electronics and Computer Engineering, Newcastle, NE1 7RU, United Kingdom
Sanatan Chattopadhyay
Affiliation:
sanatan.chattopadhyay@ncl.ac.uk, Newcastle University, School of Electrical, Electronics and Computer Engineering, Newcastle, NE1 7RU, United Kingdom
Nick G. Wright
Affiliation:
n.g.wright@ncl.ac.uk, Newcastle University, School of Electrical, Electronics and Computer Engineering, Newcastle, NE1 7RU, United Kingdom
Karl S. Coleman
Affiliation:
k.s.coleman@ncl.ac.uk, University of Durham, Department of Chemistry, South Road, Durham, DH1 3LE, United Kingdom
Get access

Abstract

HfO2 films were grown on SiO2/4H-SiC and SiON/4H-SiC layers by evaporation of metallic Hf in an electron beam deposition system followed by thermal oxidation. X-ray photoelectron spectroscopy confirmed the formation of HfO2 films. There is no evidence of formation of hafnium silicide or carbon pile up at the surface as well as at the interfacial layer. Electrical measurements show the presence of fewer slow traps in the HfO2/SiON gate dielectric stack on 4H-SiC and comparable values of interface state density. The HfO2/SiON stack layer improves leakage current characteristics with a higher breakdown field and has better reliability under electrical stress.

Keywords

dielectricmicroelectronicsx-ray photoelectron spectroscopy (XPS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 996: Symposium H – Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies , 2007 , 0996-H07-08
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Bhatnagar, M. and Baliga, B. J., IEEE Trans. Electron. Dev. 41, 1040 (1993).Google Scholar
[2] Cooper, J. A., Phys. Status Solidi A 162, 305 (1997)Google Scholar
[3] Ruff, M., Mitlehner, H., and Helbig, R., IEEE Trans. Electron. Dev. 41, 1040 (1994)Google Scholar
[4] Dimitrijev, S. and Jamet, P., Microelectron. Reliab. 43, 225 (2003)Google Scholar
[5] Lipkin, L. A. and Palmour, J. W., IEEE Trans. Electron. Dev. 46, 525 (1999)Google Scholar
[6] Afanas'ev, V. V., Stesmans, A., Chen, F., Campbell, S. A., and Smith, R., Appl. Phys. Lett. 82, 922 (2003)Google Scholar
[7] Afanas'ev, V. V., Stesmans, A., Ciobanu, F., Pensl, G., Cheong, K. Y. and Dimitrijev, S., Appl. Phys. Lett. 82, 568 (2003)Google Scholar
[8] Ikarashi, N., Watanabe, K., Masuzaki, K., Nakagawa, T., and Miyamura, M., J. Appl. Phys. 100, 063507 (2006)Google Scholar
[9] Xu, J. P., Lai, P. T., Chan, C. L., Li, B., and Cheng, Y. C., IEEE Trans. Electron. Dev. Lett. 21, 298 (2000)Google Scholar
[10] Avice, M., Grossner, U., Pintilie, I., Svensson, B. G., O. Nilsen and Fjellvag, H., Appl. Phys. Lett. 89, 222103 (2006)Google Scholar
[11] Mahapatra, R.., Poolamai, N., Chattopadhyay, S., Wright, N. G., Chakraborty, A. K, Coleman, K S, Coleman, P. G. and Burrows, C. P, Appl. Phys. Lett. 88, 072910 (2006)Google Scholar
[12] Gao, K. Y., Seyller, Th., Ley, L., Ciobanu, F., Pensl, G., Tadich, A., Riley, J. D., and Leckey, R. G. C., Appl. Phys. Lett. 83, 1830 (2003)Google Scholar
[13] Paskaleva, A., Ciechonski, R. R. and Syväjärvi, M., Atanassova, E., and Yakimova, R., J. Appl. Phys. 97, 124507 (2005)Google Scholar
[14] Perez-Tomas, A., Godignon, P., Montserrat, J., Millan, J., Mestres, N., Vennegues, P., and Stoemenos, J., J. Electrochem. Soc. 152 (4), G259 (2005)Google Scholar
[15] Huang, S. –W. and Hwu, J. –G., IEEE Trans. Electron. Dev. 51, 1877 (2004)Google Scholar