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Impact of H2-preannealing of the Sapphire Substrate on the Crystallization of Low-Temperature-Deposited AlN Buffer Layer

Published online by Cambridge University Press:  01 February 2011

Michinobu Tsuda
Affiliation:
Single Crystal Division, Kyocera Corporation, 1166–6, Nagatanino, Hebimizo-cho, Youkaichi-city, Shiga 527–8555, Japan Faculty of Science and Technology, 21st Century-COE “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan
Krishnan Balakrishnan
Affiliation:
Faculty of Science and Technology, 21st Century-COE “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan
Motoaki Iwaya
Affiliation:
Faculty of Science and Technology, 21st Century-COE “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan
Satoshi Kamiyama
Affiliation:
Faculty of Science and Technology, 21st Century-COE “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan
Hiroshi Amano
Affiliation:
Faculty of Science and Technology, 21st Century-COE “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan
Isamu Akasaki
Affiliation:
Faculty of Science and Technology, 21st Century-COE “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan
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Abstract

The effect of H2-preannealing of sapphire substrate on low-temperature (LT- ) AlN buffer layer deposited by metalorganic vapor phase epitaxy is investigated. Crystallinity of LT-AlN drastically changes with preannealing temperature variation. It is found that H2-preannealing of sapphire substrate is a requisite to get a better quality LT-AlN and as a consequence it leads to growth of better quality GaN epi-layer on it.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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