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Imaging Schottky Barriers at Carbon Nanotube Contacts

Published online by Cambridge University Press:  15 March 2011

Marcus Freitag  and
A. T. Johnson
Marcus Freitag
Affiliation:
Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104
A. T. Johnson
Affiliation:
Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104
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Abstract

We use scanning gate microscopy to precisely locate the gating response in single-wall nanotube devices. Junctions of metallic and semiconducting nanotubes show a dramatic increase in transport current when they are electrostatically doped with holes at the junction. We ascribe this behavior to the turn-on of a reverse biased Schottky barrier. A similar effect is seen in field-effect transistors made from an individual semiconducting single-wall carbon nanotube. In this case, there are two Schottky barriers at the metal contacts, one of which is forward, and one of which is reverse biased. The gating action is only observed at the reverse biased Schottky barrier at the positive electrode. By positioning the gate near one of the contacts, we convert the nanotube field-effect transistor into a rectifying nanotube diode. These experiments both clarify the gating mechanism for nanotube devices and indicate a strategy for diode fabrication based on controlled placement of acceptor impurities at a nanotube field-effect transistor.

Type
Article
Information
MRS Online Proceedings Library (OPL) , Volume 706: Symposium Z – Making Functional Materials with Nanotubes , 2001 , Z11.8.1
Copyright
Copyright © Materials Research Society 2002

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