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Image Acquisition Using Non-Pixeled Amorphous Silicon Based Sensors

Published online by Cambridge University Press:  17 March 2011

M. Fernandes ,
Yu. Vygranenko ,
J. Martins  and
M. Vieira
M. Fernandes
Affiliation:
Electronics and Communication Dept., ISEL, R. Conselheiro Emidio Navarro, 1949-014 Lisboa, Portugal
Yu. Vygranenko
Affiliation:
Electronics and Communication Dept., ISEL, R. Conselheiro Emidio Navarro, 1949-014 Lisboa, Portugal
J. Martins
Affiliation:
Electronics and Communication Dept., ISEL, R. Conselheiro Emidio Navarro, 1949-014 Lisboa, Portugal
M. Vieira
Affiliation:
Electronics and Communication Dept., ISEL, R. Conselheiro Emidio Navarro, 1949-014 Lisboa, Portugal
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Abstract

We suggest to enhance the performance of image acquisition systems based on large area amorphous silicon based sensors by optimizing the readout parameters such as the intensity and cross-section of scanner beam, acquisition time and bias conditions. The main output device characteristics as image responsivity, signal to noise ratio and spatial resolution were analyzed in open circuit, short circuit and photodiode modes. The result show that the highest signal to noise ratio and best dark to bright ratio can be achieved in short circuit mode.

It was shown that the sensor resolution is related to the basic device parameters and, in practice, limited by the acquisition time and scanning beam properties. The scanning beam spot size limits the resolution due to the overlapping of dark and illuminated zones leading to a blurring effect on the final image and a consequent degradation in the resolution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D5.17.1
Copyright
Copyright © Materials Research Society 2001

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References

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