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Identification of W20O58 Phase In CVD Tungsten Films

Published online by Cambridge University Press:  21 February 2011

M. Lawrence ,
A. Dass ,
Siva Sivaram  and
Bryan Tracy
M. Lawrence
Affiliation:
Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA 95051
A. Dass
Affiliation:
Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA 95051
Siva Sivaram
Affiliation:
Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA 95051
Bryan Tracy
Affiliation:
Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA 95051
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Abstract

Thin films of tungsten grown in a CVD reactor by the reduction of hydrogen and silane consisted of a two phase microstructures; a matrix phase of bcc tungsten, and a second phase of W20O58. The second phase is uniformly distributed in the film and does not afeoct 5athe electrical resistivity of hydrogenreduced films (8 μohm-cm). However, dissolved oxygen in the silane-reduced film contributes to the observed higher electrical resistivity (13 μohm-cm) along with smaller grain size. The larger amount of oxide in the hydrogen-reduced film correlates with its slower growth rate when compared to the silane-reduced film which contained a smaller amount of oxide phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 185
Copyright
Copyright © Materials Research Society 1990

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References

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