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Identification of Possible Bonding Sites for Post Deposition Oxygen Absorption in Microcrystalline Silicon

Published online by Cambridge University Press:  21 March 2011

L. M. Gedvilas  and
A. H. Mahan
L. M. Gedvilas
Affiliation:
NREL, 1617 Cole Blvd., Golden, CO 80401
A. H. Mahan
Affiliation:
NREL, 1617 Cole Blvd., Golden, CO 80401
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Abstract

Using infrared (IR) spectroscopy and x-ray diffraction, the nature of the grain boundaries in twom c-Si films deposited by hot wire CVD, displaying similar crystalline volume fractionsbut very different behavior upon exposure to atmospheric contaminants, is analyzed. For the film exhibiting significant post deposition oxidation, the IR spectrum in the 2100 cm−1 Si-H stretch mode region contains two sharp and very narrow peaks, suggesting that the crystallites have been incorporated into them c-Si films with their hydrogenated surfaces relatively intact.By comparing these peak frequencies to those in the literature for Si-H bonding on c-Si surfaces, we identify certain crystallite orientations which, when comprising the c-Si grain boundaries, are particularly susceptible to oxidation. We further suggest that the distribution of H in this grain boundary/crystallite surface region is crucial for depositing c-Si films with good electronic properties and minimal post deposition oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A9.2
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Yamanoto, K., Yoshimi, M., Tawada, Y., Okamoto, Y., Nakajima, A., and Igari, S., Appl. Phys. A 69 (1999) 179.Google Scholar
2. Klein, S., Finger, F., Carius, R., Rech, B., Houben, L, Luysberg, M., Stutzmann, M.: Mater. Res. Soc. 715 (2002) A26.2.Google Scholar
3.See e.g. the Proceedings of the 3rd WCPEC conference (Osaka, Japan, May 12-16, 2003)Google Scholar
4. Meier, J., Torres, P., Platz, R., Dubail, S., Kroll, U., Selvan, J.A. Anna, Vaucher, N. Pellaton, Hof, Ch., Fischer, D., Kepner, H., Shah, A., Uefert, K.D., Giannoules, P, and Koehler, J., MRS Symp. Proc. 420 (1996) 3.Google Scholar
5. Stryahilev, D., Diehl, F., Schroeder, B., Scheib, M., and Belogorokhov, A.I., Phil. Mag. B 80 (2000) 1799.Google Scholar
6. Rath, J.K. and Schropp, R.E.I., MRS Symp. Proc. 609 (2000) A22.1.Google Scholar
7. Satoh, T. and Hiraki, A., Jpn. J. Appl. Phys. 24 (1985). L491.Google Scholar
8. Wagner, H. and Beyer, W., Solid State Commun. 48 (1983) 585.Google Scholar
9. Lucovsky, G., Solid State Commun. 29 (1979) 571.Google Scholar
10. Wang, Q., Iwaniczko, E., Xu, Y., Nelson, B.P., Mahan, A.H., Crandall, R.S., Branz, H.M., 28thIEEE Photovoltaic Specialists conference (2000) 717–720.Google Scholar
11. Nelson, B.P., Xu, Y., Webb, J.D., Mason, A., Reedy, R.C., Gedvilas, L.M., and Lanford, W.A., J. non-Cryst. Sol. 266–269 (1999) 680.Google Scholar
12.See data on (cubic) Si in 1998 JCPDS – International Center for Refraction Data.Google Scholar
13. Agarwal, S., Takano, A., Sanden, M.C.M. van de, Maroudas, D., and Aydil, E.S., J. Chem. Phys. 117 (2002) 10805.Google Scholar
14. Niwano, M., Terashi, M., and Kuge, J., Surface Science 420 (1999) 6.Google Scholar
15. Chabal, Y.J. and Raghavachari, K., Phys. Rev. Lett. 54 (1985) 1055.Google Scholar
16. Higashi, G.S., Chabal, J.J., Trucks, G.W., and Raghavachari, K., Appl. Phys. Lett. 56 (1990) 656.Google Scholar
17. Zhang, X., Chabal, Y.J., Christman, S.B., Chaban, E.E., and Garfunkel, E., J. Vac. Sci. Tech. 19 (2001) 1725.Google Scholar
18. Niwano, M., Kageyama, J., Kurita, K., Kinashi, K., Takahashi, I., and Miyamoto, N., J. Appl. Phys. 76 (1994) 2157.Google Scholar
19. Weldon, M.K., Stefanov, B.B., Raghavachari, K., and Chabal, Y.J., Phys. Rev. Lett. 79 (1997) 2851.Google Scholar
20. Biswas, R., Pan, B.C. and Ye, Y., Phys. Rev. Lett. 88 (2002) 205502.Google Scholar
21. Rath, J.K., Tichelaar, F.D., and Schropp, R.E.I., MRS Symp. Proc. 557 (1999) 573.Google Scholar
22. Iwaniczko, E., Mahan, A.H., Yan, B., Gedvilas, L.N., Williamson, D.L., and Nelson, B.P., MRS Symp. Proc. 762 (2003) 387.Google Scholar