Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-26T06:28:56.334Z Has data issue: false hasContentIssue false
  • English
  • Français

Identification of Microdefects in Multicrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

M. Werner ,
H. J. Möller  and
E. Wolf
M. Werner
Affiliation:
Max-Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle/Saale
H. J. Möller
Affiliation:
Institute for Experimental Physics, TU Bergakademie Freiberg, Silbermannstraβe I, D-09599 Freiberg
E. Wolf
Affiliation:
Institute for Crystal Growth, Rudower Chaussee 6, D-12489, Berlin
Get access

Abstract

Microdefects in multicrystalline silicon grown by directional solidification have been investigated by transmission electron microscopy. Their density (=106 cm−2) correlates with the density of shallow etch pits observed after chemomechanical polishing and selective etching. Different types of microdefects (size 10 – 100 nm) could be identified: i) spherical precipitates most likely amorphous silicon dioxide, ii) small plates lying on {111} planes and iii) groups of closely spaced stacking faults having the character of dipoles. It is argued that these defects are the result of agglomeration process of intrinsic point defects and impurities, where oxygen and carbon are the main candidates. A qualitative comparison to the point defects agglomeration observed in Cz material will be given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 89
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Möller, H. J., Yang, D., Riedel, S.. Werner, M. and Wolf, E. Sixth Workshop on The Role of Impurities and Defects in Silicon Device Processing, August 12–14, 1996, Snowmass, Colorado, p. 34–37 Google Scholar
[2] Föil, H. and Kolbesen, B.O., Appl. Phys. 8, 319 (1975)Google Scholar
[3] Roksnoer, P. J. and van den Boom, M.M.B., J. Cryst. Growth 53, 561 (1981)Google Scholar
[4] von Ammon, W. Dornberger, E., Oelkrug, H. and Weidner, H., J. Crystal Growth 151, 273 (1995)Google Scholar
[5] Föll, H., Gösele, U. and Kolbesen, B.O., in Semiconductor Silicon 1977, (eds. Huff, H.R. and Sirtl, E., The Electrochem. Soc. Princeton) p. 565 Google Scholar
[6] Kato, M., Ikida, Y. and Kitagawa, Y., Jpn. J. Appl. Phys. 35. 5597 (1996)Google Scholar
[7] Kalejs, J.P., J. Cryst. Growth 128. 298 (1993)Google Scholar
[8] Wolf, E., Klinger, D. and Bergmann, S., Solid State Phenomena Vols. 51–52 87 (1996)Google Scholar
[9] Werner, M.. Weber, E.R., McHugo, S., Hieslmair, H. and Chapman, K.L., Solid State Phenomena Vols. 47–48. 449 (1996)Google Scholar
[10] Voronko, V.V.. J. Cryst. Growth 59. 625 (1982)Google Scholar