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ICP Dry Etching of III-V Nitrides

Published online by Cambridge University Press:  10 February 2011

C. B. Vartuli ,
J. W. Lee ,
J. D. MacKenzie ,
S. M. Donovan ,
C. R. Abernathy ,
S. J. Pearton ,
R. J. Shul ,
C. Constantine ,
C. Barrati  and
A. Katz
...Show all authors
C. B. Vartuli
Affiliation:
University of Florida, Dept MS&E, Gainesville Fl
J. W. Lee
Affiliation:
University of Florida, Dept MS&E, Gainesville Fl
J. D. MacKenzie
Affiliation:
University of Florida, Dept MS&E, Gainesville Fl
S. M. Donovan
Affiliation:
University of Florida, Dept MS&E, Gainesville Fl
C. R. Abernathy
Affiliation:
University of Florida, Dept MS&E, Gainesville Fl
S. J. Pearton
Affiliation:
University of Florida, Dept MS&E, Gainesville Fl
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque NM
C. Constantine
Affiliation:
PlasmaTherm IP, St. Petersburg Fl
C. Barrati
Affiliation:
PlasmaTherm IP, St. Petersburg Fl
A. Katz
Affiliation:
EPRI, Palo Alto, CA
A. Y. Poyakov
Affiliation:
Carnegie Mellon University, Dept of MS&E, Pittsburgh. PA.
M. Shin
Affiliation:
Carnegie Mellon University, Dept of MS&E, Pittsburgh. PA.
M. Skowronski
Affiliation:
Carnegie Mellon University, Dept of MS&E, Pittsburgh. PA.
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Abstract

Inductively coupled plasma etching of GaN, AlN, InN, InGaN and InAlN was investigated in CH4/H2/Ar plasmas as a function of dc bias, and ICP power. The etch rates were generally quite low, as is common for III-nitrides in CH4 based chemistries. The etch rates increased with increasing dc bias. At low rf power (150W), the etch rates increased with increasing ICP power, while at 350W rf power, a peak was found between 500 and 750 W ICP power. The etched surfaces were found to be smooth, while selectivities of etch were ≤ 6 for InN over GaN, AlN, InGaN and InAlN under all conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 393
Copyright
Copyright © Materials Research Society 1997

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