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Ibad Diffusion Barriers Between YBaCuO and Si
Published online by Cambridge University Press: 28 February 2011
Abstract
Different materials were investigated for use as diffusion barriers between silicon and yttrium barium copper oxide (YBCO). Ion beam assisted deposition (IBAD) of 300nm zirconia films at room temperature prevented interdiffusion at sintering temperatures over 800°C. Similar MgO and indium-tin oxide films did not prevent degradation at elevated temperatures. All films deposited on top of YBCO reduced the effects of extended atmospheric exposure.
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- Copyright © Materials Research Society 1990
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