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Hydrothermally Deposited PZT Thin Films With Vertically Oriented Columnar Growth

Published online by Cambridge University Press:  01 February 2011

Scott Solberg
Affiliation:
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA, USA.
Alexandra Rodkin
Affiliation:
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA, USA.
Baomin Xu
Affiliation:
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA, USA.
Karl Littau
Affiliation:
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA, USA.
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Abstract

A novel growth mode for hydrothermal films of lead zirconate titanate (PZT) has been discovered. Previously reported hydrothermal PZT films have had a loosely-packed cubic morphology, and indeed that is the most common growth mode. However, under special growth conditions, with much more dilute reagent concentrations than previously reported, substantially vertically oriented, long rod shaped grains may be grown. Metal-organic reagents such as lead acetate trihydrate, zirconium propoxide, and titanium isopropoxide were used along with potassium hydroxide mineralizer. Metal and metal-coated substrates with appropriate perovskite seed layers, such as lead titanate (PT) and PZT were used. Unlike other film deposition methods, such as sputtering, MOCVD, or sol-gel, which typically require greater than 500°C processing temperatures, the hydrothermal processes described in this report allowed the growth of highly crystalline films at temperatures as low as 120°C. The unique vertical rod-like ferroelectric films may be useful in electrical devices such as capacitors.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Ogawa, T., Shindou, S., Senda, A., and Kasanami, T. in Ferroelectric Thin Films II, edited by Kingon, A.I., Myers, E.R., and Tuttle, B., (Mat. Res. Soc. Symp. Proc. 243, Pittsburg, PA, 1992) pp. 9399.Google Scholar
2. Sakashita, Y., Ono, T., and Segawa, H., J. Appl. Phys. 69 (12), 8352 (1991).Google Scholar
3. Budd, K.D., Dey, S.K., Payne, D.A., British Ceramic Proceedings 36, 107 (1985).Google Scholar
4. Shimomura, K., Tsurumi, T., Ohba, Y., and Daimon, M., Jap. J. Appl. Phys. 30 (9B), 2174 (1991).Google Scholar
5. Ohba, Y., Arita, K., Tsurumi, T., and Daimon, M., Jap. J. Appl. Phys. 33 (9B), 5305 (1994).Google Scholar
6. Byrappa, K. and Yoshimura, M., Handbook of Hydrothermal Technology (Noyes Publications, New Jersey, 2001), p. 7.Google Scholar
7. Kutty, T.R.N. and Balachandran, R., Mat. Res. Bull. 19, 1479 (1984).Google Scholar
8. Lencka, M. M., Anderko, A., and Riman, R.E., J. Am. Ceram. Soc., 78 (10), 2609 (1995).Google Scholar
9. Nishiwaki, Tsutomu, Sumi, K., Murai, M., and Shimada, M., U.S. Patent No. 6 013 970 (11 January 2000).Google Scholar
10. Chen, H. D., Udayakumar, K.R., Gaskey, C.J., and Cross, L.E., J. Am. Ceram. Soc. 79 (8), 2189 (1996).Google Scholar
11. Cullity, B. D., Elements of X-Ray Diffraction, 2nd ed. ( Addison-Wesley, Reading, MA, 1978), p. 102.Google Scholar
12. Vayssieres, L., Keis, K., Lindquist, S.E., and Hagfeldt, A., J. Phys. Chem. B 105, 3350 (2001).Google Scholar
13. Xu, H., Kiyomoto, T., Morikawa, Y., Okuyama, M., and Lin, C., Jap. J. Appl. Phys., 37 (Part 2, 7A), L809811 (1998).Google Scholar