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Hydrogenated Amorphous Silicon/Aluminum Interaction at Low Temperatures

Published online by Cambridge University Press:  21 February 2011

M. Shahidul Haque ,
H. A. Naseem ,
W. D. Brown  and
S. S. Ang
M. Shahidul Haque
Affiliation:
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701
H. A. Naseem
Affiliation:
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701
W. D. Brown
Affiliation:
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701
S. S. Ang
Affiliation:
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701
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Abstract

Annealing effects on the Al/a-Si:H structure in the temperature range 100°C to 300°C have been studied. Aluminum was evaporated on device quality phosphorous doped n+ a-Si:H films deposited in a UHV-PECVD system. The transmission line model (TLM) technique was used to measure the sheet resistance and contact resistivity of the films. For samples where Al covered the entire a-Si:H surface during annealing, sheet resistance and contact resistivity were found to decrease monotonically with annealing temperature. On the other hand, samples annealed after patterning Al pads showed a minimum in sheet resistance and contact resistivity at temperatures between 170°C and 200°C with a steep increase beyond 250°C. Optical and scanning electron microscopy, as well as surface profilometry, were used to study the surface morphology. A simple model involving Al interaction with the a-Si:H at the surface is proposed to explain the electrical behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1037
Copyright
Copyright © Materials Research Society 1992

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References

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