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Hydrogenated Amorphous Silicon Films Prepared by Mercury Sensitized Photochemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

Takaaki Kamimura ,
Hidetoshi Nozaki ,
Naoshi Sakuma ,
Mitsuo Nakajima  and
Hiroshi Ito
Takaaki Kamimura
Affiliation:
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Hidetoshi Nozaki
Affiliation:
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Naoshi Sakuma
Affiliation:
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Mitsuo Nakajima
Affiliation:
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Hiroshi Ito
Affiliation:
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
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Abstract

Hydrogenated amorphous silicon (a-Si:H) films were prepared by mercury photosensitized decomposition of silane using a low-pressure mercury lamp. The deposition rate showed an activation type for substrate temperature (the activation energy: 0.13 eV), because the deposition rate would be determined by the rate of hydrogen elimination from the hydrogen saturated surface. Moreover, the relationship was found between the Si-H2 bond density in a- Si:H films and the gas phase reactions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 51
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1) Inoue, T., Konagai, M. and Takahashi, K., Appl. Phys. Lett. 43, 774 (1984).Google Scholar
2) Takei, H., Tanaka, T., Kim, W. Y., Konagai, M. and Takhashi, K., J. Appl. Phys. 58, 3664 (1985).Google Scholar
3) Suzuki, K., Yukawa, Y., Takao, H., Kuroiwa, K. and Tarui, Y., Jpn. J. Appl. Phys. 25, L811 (1986).Google Scholar
4) Kamimura, T. and Hirose, M., Jpn. J. Appl. Phys. 25, 1778 (1986).Google Scholar
5) Tsai, C. C., Knights, J. C., Chang, G. and Wacker, B., J. Appl. Phys. 59, 2998 (1986).CrossRefGoogle Scholar
6) Kampas, F. J., in Preparation and Structure of Hydrogenated Amorphous Silicon, edited by Pankove, J. (Academic, New York, 1984), p. 153.Google Scholar
7) Austin, E. R. and Lampe, F. W., J. Phys. Chem. 80, 2811 (1976).Google Scholar
8) Perrin, J. and Broekhuizen, T., Appl. Phys. Lett. 50, 433 (1987).Google Scholar
9) Chapman, B., in Glow Discharge Processes (John Wiley & Sons, New York, 1980), Chap. 1, p. 16.Google Scholar