Hostname: page-component-77c89778f8-sh8wx Total loading time: 0 Render date: 2024-07-23T18:05:08.828Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogen Transport in Phosphorus and Boron Dopedpolycrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

N. H. Nickel  and
I. Kaiser
N. H. Nickel
Affiliation:
Hahn-Meitner-Institut Berlin, Rudower Chaussee 5, D-12489 Berlin, Germany.
I. Kaiser
Affiliation:
Hahn-Meitner-Institut Berlin, Rudower Chaussee 5, D-12489 Berlin, Germany.
Get access

Abstract

Hydrogen diffusion in phosphorus and boron doped polycrystalline silicon was investigated by deuterium diffusion experiments. The presence of dopants enhances hydrogen diffusion. The effective diffusion coefficient Deff is thermally activated and the activation energy varies between 0.1 and 0.4 eV. This is accompanied by a variation of the diffusion prefactor by 12 orders of magnitude. Using the theoretical diffusion prefactor the actual energy EA was calculated from Deff.EA also depends strongly on the Fermi energy and exhibits a similar dependence as the formation energies of H+ and H- in single crystal silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 305
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Kamins, T. J. and Marcoux, P. J., IEEE Electron Device Lett. EDL–1, 159 (1980).Google Scholar
2 Nickel, N. H., Johnson, N. M., and Jackson, W. B., Appl. Phys. Lett. 62, 3285 (1993).Google Scholar
3 Santos, P.V., Johnson, N. M., Street, R. A., Hack, M., Thompson, R., and Tsai, C. C., Phys. Rev. B 47, 10244 (1993), and references therein.Google Scholar
4 Branz, H. M., Asher, S. E., and Nelson, B. P., Phys. Rev. B 47, 7061 (1993).Google Scholar
5 Nickel, N. H., Jackson, W. B., and Walker, J., Phys. Rev. B 53, 7750 (1996).Google Scholar
6 Jackson, W. B. and Tsai, C. C., Phys. Rev. B 45, 6564 (1992).Google Scholar
7 Santos, P.V. and Jackson, W. B., Phys. Rev. B 46, 4595 (1992).Google Scholar
8 Herring, C. and Johnson, N. M., in Hydrogen in Semiconductors, eds. Pankove, J. I. and Johnson, N. M. (Academic Press, San Diego, 1991) vol. 34, Chap. 10.Google Scholar
9 Walle, C. G. Van de, Denteneer, P. J., Bar-Yam, Y., and Pantelides, S. T., Phys. Rev. B 39, 10791 (1989).Google Scholar
10 Nickel, N. H., Kaiser, I., and Walle, C. G. Van de, submitted for publication.Google Scholar