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Hydrogen Populations in PECVD a-Si:H,D

Published online by Cambridge University Press:  15 February 2011

T. S. Cull
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, ren@howdy.wustl.edu
M. J. Kernan
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, ren@howdy.wustl.edu
P. H. Chan
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, ren@howdy.wustl.edu
P. A. Fedders
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, ren@howdy.wustl.edu
D. J. Leopold
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, ren@howdy.wustl.edu
R. E. Norberg
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, ren@howdy.wustl.edu
P. Wickboldt
Affiliation:
Harvard University, Cambridge, MA 02138
W. Paul
Affiliation:
Harvard University, Cambridge, MA 02138
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Abstract

Proton NMR and deuteron NMR (DMR) have been used to measure hydrogen populations in a series of PECVD a-Si:H,D films. The sharp DMR doublet from Si-D is fitted and subtracted out. The residual spectra then show specific signatures for molecular D2 and HD. The fitting procedures yield quantitative measures of Si-bonded and molecular species. A particular comparison is made between a pair of films prepared as the powered and unpowered electrodes in the same plasma deposition. Both silicon-bonded and molecular populations axe significantly different in the two films and correlate with photoresponse products ημT and with IR as well as other materials characterizations.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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