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Hydrogen Measurement of Thin Film Silicon: Hydrogen Alloy Films Technique Comparison

Published online by Cambridge University Press:  22 February 2011

Gary A. Pollock
Gary A. Pollock*
Affiliation:
ARCO Solar, Inc., P.O. Box 2105, Chatsworth, CA 91313
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Abstract

The hydrogen content in thin film silicon:hydrogen alloy material has been measured by five techniques: 15N nuclear resonance reaction analysis, secondary ion mass spectrometry, infrared spectroscopy, nuclear elastic scattering spectroscopy, and Rutherford backscattering spectroscopy. NRA and SIMS data agree most closely in this study, although SIMS data from three of four laboratories are considerably scattered. The hydrogen content of TFS ranges from 18% at a deposition temperature of 150°C to 10% at 250°C. It varies little, if any, with thickness. Some advantages and disadvantages of the five techniques are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 379
Copyright
Copyright © Materials Research Society 1985

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References

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