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Hydrogen Dynamics and Tee Distribution of H Sites in Undoped a-Si:H and a-Ge:H

Published online by Cambridge University Press:  21 February 2011

R. Shinar ,
X.-L. Wu ,
S. Mitra  and
J. Shinar
R. Shinar
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011
X.-L. Wu
Affiliation:
Ames Laboratory — USDOE and Physics Department, Iowa State University, Ames, IA 50011
S. Mitra
Affiliation:
Ames Laboratory — USDOE and Physics Department, Iowa State University, Ames, IA 50011
J. Shinar
Affiliation:
Ames Laboratory — USDOE and Physics Department, Iowa State University, Ames, IA 50011
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Abstract

Secondary ion mass spectrometry and IR studies of long-range hydrogen motion in undoped a-Si:H and a-Ge:H of varying H content and microstructure are reviewed and discussed. In particular, their relation to the multiple trapping (MT) model, the role of microvoids, the significance of the Meyer-Neldel relation (MNR), and the nature of H sites is addressed. It is suggested that while the MT mechanism may be significant in a-Si:H of low H content Cfj, it is largely marginal in films where CH ≥ 10 at.% H and in a-Ge:H. Mono Si-H bonds on microvoid surfaces are apparently deep H trapping sites up to ∼ 400°C, but H is desorbed from such sites in a-Ge:H above 180°C. The MNR between the diffusional activation energy and prefactor is observed among the various a-Si:H and a-Ge:H, but its significance is questionable, and may be due to the MT mechanism only in low H content a-Si:H. The nature of the distribution of H sites is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 75
Copyright
Copyright © Materials Research Society 1991

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