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Hydrogen Dilution Effect on the Crystallinity of Silicon Films Grow by Hot Wire Cell Method

Published online by Cambridge University Press:  15 February 2011

M. Ichikawa ,
J. Takeshita ,
A. Yamada  and
M. Konagai
M. Ichikawa
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo, Japan
J. Takeshita
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo, Japan
A. Yamada
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo, Japan
M. Konagai
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo, Japan
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Abstract

A new process, the Hot Wire Cell method, was developed and successfully used to grow polycrystalline silicon thin films at a low temperature and high growth rate. In the Hot Wire Cell method, reactant gases are decomposed as a result of reacting with a heated tungsten filament placed near to a substrate and polycrystalline silicon films can be deposited at a growth rate of 1.2nm/s without hydrogen dilution and 0.9nm/s with the use hydrogen dilution. The film crystallinity changed from amorphous to polycrystalline due to the addition of hydrogen, thus hydrogen dilution was effective for improving film crystallinity. Furthermore, we obtained (220) oriented polycrystalline silicon thin films with a 90% crystal fraction by the use of hydrogen dilution. These results showed that the Hot Wire Cell method is promising for the deposition of device-grade polycrystalline silicon films for photovoltaic applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 531
Copyright
Copyright © Materials Research Society 1999

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References

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