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Hydrogen Diffusion Mechanism in Amorphous Silicon From D Tracer Diffusion: Theory and Experiment

Published online by Cambridge University Press:  01 January 1993

Howard M. Branz ,
Sally Asher ,
Brent P. Nelson  and
Mathieu Kemp
Howard M. Branz
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Sally Asher
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Brent P. Nelson
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Mathieu Kemp
Affiliation:
University of North Carolina, Chapel Hill, NC 27599
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Abstract

We compare experimental diffusion studies to the results of a theoretical study of diffusion controlled by a single deep trap level. Analytic solutions for the D profiles after annealing depend on the characteristic H release time, τ, from the deep trap. At times much shorter than τ, the D profile develops exponential wings whose decay length is the mean D displacement between trapping events. The long-time D profile is a solution to the ideal diffusion equation, but with an effective diffusion coefficient that can be calculated from features of the early-time profiles. New experimental data establish the validity of the model at a range of anneal times and temperatures. We also find that the mean displacement of free H before retrapping decreases with both increased illumination and increasing anneal temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 279
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1.See, for example, Amorphous Silicon Materials and Solar Cells, AIP Conf. Proc. 234. edited by Stafford, B. L. (AIP, New York, 1991).Google Scholar
2. Branz, H. M., Asher, S. E., and Nelson, B. P., Phys. Rev. B 47, 7061 (1993).Google Scholar
3. Kemp, M. and Branz, H. M., Phys. Rev. B 47, 7067 (1993).Google Scholar
4. Carlson, D. E. and Magee, C. W., Appl. Phys. Lett. 33, 81 (1978).Google Scholar
5. Mahan, A. H., Johnson, E. J., and Webb, J. D., this volume.Google Scholar
6. Santos, P. V. and Johnson, N. M., Appl. Phys. Lett. 62, 720 (1993).Google Scholar