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Hydrogen Adsorption Effects on Thin Film Growth Mode Studied by Ion Scattering

Published online by Cambridge University Press:  21 February 2011

F. ShojiK ,
K. Sumitomo ,
T. Kinoshita ,
Y. Tanaka ,
K. Oura  and
I. Katayama
F. ShojiK
Affiliation:
Faculty of Engineering, Osaka University, Sui ta, Osaka, 565, Japan
K. Sumitomo
Affiliation:
Faculty of Engineering, Osaka University, Sui ta, Osaka, 565, Japan
T. Kinoshita
Affiliation:
Faculty of Engineering, Osaka University, Sui ta, Osaka, 565, Japan
Y. Tanaka
Affiliation:
Faculty of Engineering, Osaka University, Sui ta, Osaka, 565, Japan
K. Oura
Affiliation:
Faculty of Engineering, Osaka University, Sui ta, Osaka, 565, Japan
I. Katayama
Affiliation:
Osaka Institute of Technology, Omiya, Asahiku, Osaka, 535 Japan.
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Abstract

The effects of hydrogen adsorption on the growth process and structures of Ag thin films on Si(111)-7×7 surfaces has been studied. The growth process and film structures are investigated by low energy electron diffraction(LEED) and low energy ion scattering spectroscopy of time of flight mode(TOF-ICISS). The hydrogen adsorbed on the surface is investigated by low energy recoil detection analysis(TOF-ERDA). We have found that Ag thin films deposited onto hydrogen covered Si(111) surfaces grow with a mode definitely different from that on clean surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 381
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Lelay, G., Surf. Sci., 132, 169(1983).CrossRefGoogle Scholar
2. Copel, M., Reuter, M.C., Kaxiras, Efthimios and Tromp, R.M., Phys. Rev. Lett. 63, 632(1989).Google Scholar
3. Higuchi, S. and Nakanishi, Y., Surf. Sci. Lett., 254, L465 (1991).Google Scholar
4. Sumitomo, K., Oura, K., Katayama, I., Shoji, F. and Hanawa, T., Nucl. Instrum. Methods, B 33, 857 (1988).Google Scholar
5. Sumitomo, K., Tanaka, K., lzawa, Y., Katayama, I., Shoji, F. and Hanawa, T., Appl. Surf. Sci., 41/42, 112 (1989).Google Scholar
6. Oura, K., Naitoh, M., Shoji, F., Yamane, J., Umezawa, K. and Hanawa, T., Nucl. Instrum. Methods, B 45, 199 (1990).CrossRefGoogle Scholar
7. Oura, K., Naitoh, M., Yamane, J. and Shoji, F., Surf. Sci. Lett., 230, L.151 (1990).Google Scholar
8. Aono, M., Oshima, C. and Ishizawa, Y., Jpn. J. Appl. Phys., 20, L829 (1981).Google Scholar
9. Koma, A., Sunouchi, K. and Miyajima, T., Microelectron. Eng., 2, 129 (1984).CrossRefGoogle Scholar