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Hrtem Characterization of 6H-15R Polytype Boundaries in Silicon Carbide Grown by Physical Vapor Transport

Published online by Cambridge University Press:  15 February 2011

E. K. Sanchez ,
M. De Graef ,
W. Qian  and
M. Skowronski
E. K. Sanchez
Affiliation:
Department of Materials Science & Engineering, Carnegie Mellon University, Pittsburgh, PA 15213-3890, esanchez@andrew.cmu.edu
M. De Graef
Affiliation:
Department of Materials Science & Engineering, Carnegie Mellon University, Pittsburgh, PA 15213-3890, esanchez@andrew.cmu.edu
W. Qian
Affiliation:
Currently at Department of Materials Science & EngineeringNorthwestern University, Evanston, IL 60208
M. Skowronski
Affiliation:
Department of Materials Science & Engineering, Carnegie Mellon University, Pittsburgh, PA 15213-3890, esanchez@andrew.cmu.edu
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Abstract

The interface between 6H and 15R polytypes of silicon carbide, grown by Physical Vapor Transport, was studied by high-resolution transmission electron microscopy. The sample was investigated in cross-section cut perpendicular to the [11.0] irection. The atomic stacking sequence at the interface of the polytypes was determined. Polytype boundaries with orientations parallel and perpendicular to the 6H c-axis were investigated. Stacking faults associated with low angle grain boundaries in both 6H and 15R regions were observed and the 15R regions systematically showed a higher fault density than the 6H regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 655
Copyright
Copyright © Materials Research Society 1997

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