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Hrem and CBED Studies of Polarity of Nitride Layers with Prismatic Defects Grown Over SiC

Published online by Cambridge University Press:  10 February 2011

P. Vermaut ,
P. Ruterana ,
G. Nouet ,
A. Salvador  and
H. Morkog
P. Vermaut
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, Unité associée CNRS 6004, Institut des Sciences de la Matière et du Rayonnement, 6 Blvd Maréchal Juin, 14050 Caen Cedex, France. (gerard@leririsl.ismra.fr)
P. Ruterana
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, Unité associée CNRS 6004, Institut des Sciences de la Matière et du Rayonnement, 6 Blvd Maréchal Juin, 14050 Caen Cedex, France. (gerard@leririsl.ismra.fr)
G. Nouet
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, Unité associée CNRS 6004, Institut des Sciences de la Matière et du Rayonnement, 6 Blvd Maréchal Juin, 14050 Caen Cedex, France. (gerard@leririsl.ismra.fr)
A. Salvador
Affiliation:
University of Illinois-Urbana, Coordinated Science Laboratory, Urbana, Illinois, IL61801, USA (morko9@uiuc.edu)
H. Morkog
Affiliation:
University of Illinois-Urbana, Coordinated Science Laboratory, Urbana, Illinois, IL61801, USA (morko9@uiuc.edu)
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Abstract

The polarity of GaN films and their AlN buffer layer grown on (0001)si 6H-SiC by an electron cyclotron resonance plasma enhanced molecular beam epitaxy has been investigated by convergent beam electron diffraction (CBED) and high resolution electron microscopy (HREM). The experimental results are in good agreement with the simulations and allow to determine that the free surfaces of the GaN and AlN layers are Ga and Al-terminated respectively. Moreover, (1210) prismatic planar defects observed in the AlN layers have been identified as stacking faults and observations in different areas of the specimens have shown that the layers are unipolar.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 317
Copyright
Copyright © Materials Research Society 1997

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References

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