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Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2

Published online by Cambridge University Press:  01 February 2011

Kanji Yasui ,
Jyunpei Eto ,
Yuzuru Narita ,
Masasuke Takata  and
Tadashi Akahane
Kanji Yasui
Affiliation:
Department of Electrical, Electronics and Information Engineering Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188, Japan
Jyunpei Eto
Affiliation:
Department of Electrical, Electronics and Information Engineering Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188, Japan
Yuzuru Narita
Affiliation:
Department of Electrical, Electronics and Information Engineering Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188, Japan
Masasuke Takata
Affiliation:
Department of Electrical, Electronics and Information Engineering Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188, Japan
Tadashi Akahane
Affiliation:
Department of Electrical, Electronics and Information Engineering Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188, Japan
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Abstract

The crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO2/Si substrates was determined to be achieved at substrate temperatures of 750-800°C, while polycrystalline SiC films, at substrate temperatures above 850°C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A8.11
Copyright
Copyright © Materials Research Society 2005

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