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Holographic Photoetching of High-Quality Diffraction Gratings in P-GaAs for Distributed Feedback Lasers
Published online by Cambridge University Press: 28 February 2011
Abstract
Quarter micrometer period diffraction gratings having depth-to-spacing ratios around 0.5 have been photochemically etched in p-GaAs using direct holographic illumination with 257 nm UV light. The results suggest the interaction of the incident light with the etched grating. The etch process is represented with the aid of a potential-pH diagram calculated from literature data.
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