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Hole Scattering in p-type Wurtzite Gallium Nitride

Published online by Cambridge University Press:  21 March 2011

J. D. Albrecht  and
P. P. Ruden
J. D. Albrecht
Affiliation:
Electronics Science and Technology Division Naval Research Laboratory, Washington, DC 20375, U.S.A.
P. P. Ruden
Affiliation:
Department of Electrical and Computer EngineeringUniversity of Minnesota, Minneapolis, MN 55455, U.S.A.
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Abstract

We investigate acoustic phonon scattering processes for holes in wurtzite gallium nitride. Using a six-band Rashba-Sheka-Pikus Hamiltonian description of the valence bands of gallium nitride, total scattering rates are calculated by numerical integration over final states. An examination of the interband and intraband processes shows strong scattering rate anisotropy between holes moving parallel to and perpendicular to the hexagonal plane. Results are given for inelastic acoustic deformation potential and piezoelectric scattering processes involving both longitudinal and transverse acoustic phonon absorption.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E4.6
Copyright
Copyright © Materials Research Society 2001

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References

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