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HNO3 treatment of sapphire for management of GaN polarity in MOCVD method: Comparison of the properties of +c and –c GaN region

Published online by Cambridge University Press:  01 February 2011

Motoki Takabe ,
Masatomo Sumiya  and
Shunro Fuke
Motoki Takabe
Affiliation:
Electrical and Electronic Engineering, Shizuoka University, Hamamatsu, 432–8561, Japan
Masatomo Sumiya
Affiliation:
Electrical and Electronic Engineering, Shizuoka University, Hamamatsu, 432–8561, Japan CREST-JST
Shunro Fuke
Affiliation:
Electrical and Electronic Engineering, Shizuoka University, Hamamatsu, 432–8561, Japan
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Abstract

GaN film with Ga- (+c) and N- (-c) face polarities was simultaneously grown on c-plane sapphire substrate by using only metalorganic chemical vapor deposition. Although several kinds of processes were examined, we achieved the simultaneous growth by using the patterned AlN nucleation layer or selective treatment of sapphire surface in HNO3 solution. The latter process improved not only the quality of the sample but also the boundary between +c and –c GaN region, because the treat of substrate itself for controlling the polarity of GaN was carried out at lower temperature. The PL and Raman spectra of the simultaneous growth samples indicated larger amount of impurities in –c GaN side, which was consistent with our previous work [Sumiya et al. Appl. Phys. Lett. 76, 2098 (2000)].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y3.3
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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