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High-Temperature Switching Characteristics of 6H-SiC Thyristor

Published online by Cambridge University Press:  15 February 2011

K. Xie ,
J. R. Flemish ,
T. Burke ,
W. R. Buchwald  and
J. H. Zhao
K. Xie
Affiliation:
US Army Research Laboratory, Physical Sciences Directorate, AMSRL-PS-DB, Fort Monmouth, NJ 07703-5000
J. R. Flemish
Affiliation:
US Army Research Laboratory, Physical Sciences Directorate, AMSRL-PS-DB, Fort Monmouth, NJ 07703-5000
T. Burke
Affiliation:
US Army Research Laboratory, Physical Sciences Directorate, AMSRL-PS-DB, Fort Monmouth, NJ 07703-5000
W. R. Buchwald
Affiliation:
US Army Research Laboratory, Physical Sciences Directorate, AMSRL-PS-DB, Fort Monmouth, NJ 07703-5000
J. H. Zhao
Affiliation:
ECE Department, Rutgers University, Piscataway, NJ 08855
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Abstract

A 280 V 6H-SiC thyristor has been fabricated and characterized. The switching characteristics of the SiC thyristor were investigated over a temperature range from 23 °C to 400 °C, with a switched current density of 4900 A/cm2 being observed under pulse bias condition. The thyristor has shown a dV/dt of 400 V/ms. Both the turn-on time and turn-off time increase significantly at 400 °C. The thyristor forward breakover voltage decreases by only 5% when the operating temperature is increased from 23 °C to 400 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 93
Copyright
Copyright © Materials Research Society 1996

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