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High-Temperature Superconducting Y-Ba-Cu-O Thin Film by using Ionized Cluster Beam Method

Published online by Cambridge University Press:  28 February 2011

K. Yamanishi ,
S. Yasunaga ,
K. Imada ,
K. Sato  and
Y. Hashimoto
K. Yamanishi
Affiliation:
Product Development Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyougo, 661, Japan
S. Yasunaga
Affiliation:
Product Development Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyougo, 661, Japan
K. Imada
Affiliation:
Material and Electronic Devices Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyougo, 661, Japan
K. Sato
Affiliation:
Material and Electronic Devices Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyougo, 661, Japan
Y. Hashimoto
Affiliation:
Material and Electronic Devices Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyougo, 661, Japan
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Abstract

High-temperature superconducting Y-Ba-Cu-O films were obtained for the first time by using the ionized cluster beam (ICB) method. It was confirmed that the films resulted in superconductor showing the zero resistance at the temperature above 7 7K.

Three ICB sources were used to control the composition of the film, where ionized each cluster of Y, Ba and Cu was ejected simultaneously from the sources to the MgO substrate in high vacuum. The grown film annealed at 930 °C in oxygen atmosphere showed superconducting behaviour in electrical resistance-temperature relationship. The transition temperature to a superconducting state depends on the voltage to accelerate ionized cluster beams and film thickness. The highest temperature obtained to date is 89K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 99: Symposium AA – High-Temperature Superconductors , 1987 , 343
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Hong, M., Liou, S.H., Kwo, J. and Davidson, B.A., App. Phys. Lett 51 (9), 694 (1987).Google Scholar
2. Kwo, J., Hsieh, T.C., Fleming, R.M., Hong, M., Liou, S.H. and Davidson, B. A., Feldman, L.C., Appl. Phys. Lett. 51 (14), 1112 (1987).Google Scholar
3. Takagi, T., Yamada, I. and Matsubara, K., Thin Solid Films, 58 9 (1979).Google Scholar
4. Minowa, Y., Yamanishi, K. and Tsukamoto, K., J. Vac. Sci. Technol. B1 (4), 1148 (1983).Google Scholar
5. Fukushima, K., Yamada, I. and Takagi, T., Proc. of 9th Symp. on ISIAT'85, 363 (1985).Google Scholar