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High-rate a-Si:H and μc-Si:H Film Growth Studied by Advanced Plasma and in situ Film Diagnostics

Published online by Cambridge University Press:  01 February 2011

W.M.M. Kessels ,
P.J. van den Oever ,
J.P.M. Hoefnagels ,
J. Hong ,
I.J. Houston  and
M.C.M. van de Sanden
W.M.M. Kessels
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
P.J. van den Oever
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
J.P.M. Hoefnagels
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
J. Hong
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
I.J. Houston
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
M.C.M. van de Sanden
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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Abstract

Plasma and in situ film studies have been applied to the expanding thermal plasma to obtain basic insight into the deposition of a-Si:H and μc-Si:H at high rates (> 10 Å/s). A study of the density of plasma radicals (Si, SiH, SiH3) and of the radicals' surface reactivity has revealed that SiH3 is the most important radical for the growth of both materials. In situ attenuated total reflection infrared spectroscopy and spectroscopic ellipsometry have revealed a thick interface layer and consequently long incubation time for the materials deposited at a high deposition rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A25.6
Copyright
Copyright © Materials Research Society 2002

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References

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