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High-rate (> 1nm/s) and low-temperature (< 400°C) deposition of silicon nitride using an N2/SiH4 and NH3/SiH4 expanding thermal plasma

Published online by Cambridge University Press:  01 February 2011

J. Hong ,
W.M.M. Kessels  and
M.C.M. van de Sanden
J. Hong
Affiliation:
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands
W.M.M. Kessels
Affiliation:
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands
M.C.M. van de Sanden
Affiliation:
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands
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Abstract

High-rate (> 1 nm/s) and low-temperature (50– 400°C) deposition of silicon nitride (a-SiNx:H) films has been investigated by the expanding thermal plasma (ETP) technique using SiH4 as Si-containing and N2 or NH3 as N-containing precursor gases. The structural, optical and electrical properties of the a-SiNx:H films have been studied by elastic recoil detection, spectroscopic ellipsometry, infrared spectroscopy, dark conductivity measurements and atomic force microscopy. The film properties of the ETP deposited a-SiNx:H films in this low-temperature range are discussed in terms of deposition rate, atomic composition, UV-VIS optical and IR vibrational properties, conductivity, and surface topography of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A18.6
Copyright
Copyright © Materials Research Society 2003

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