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High-Quality Photoconductive Ultraviolet GaN/6H-SiC Detector and Its Properties

Published online by Cambridge University Press:  10 February 2011

K. Yang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, China
R. Zhang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, China
L. Zang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, China
B. Shen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, China
Z.Z. Chen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, China
Y.D. Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, China
X. M. Bao
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, China
Z.C. Huang
Affiliation:
Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228-5398
J.C. Chen
Affiliation:
Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228-5398
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Abstract

The properties of photoconductive ultraviolet detector based on GaN epilayer grown on 6H-SiC substrate by metalorganic chemical vapor deposition were investigated in this paper. We obtained the detectable energy span of the device up to ultraviolet by photocurrent measurement. The spectral responsivity remained nearly constant for wavelengths from 250 to 365 nm and dropped by three orders of magnitude within 10 nm of the band edge (by 380 nm). The detector was measured to have a responsivity of 133 A/W at a wavelength of 360 nm under a 5-V bias, and the voltage-dependent responsivity was performed. Furthermore, an easy method was developed to determine the response time, and the relationship between response time and bias was obtained.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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