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High-Quality InAs/A1Sb Superlattices with AlAs and InSb Interfaces

Published online by Cambridge University Press:  22 February 2011

Brian R. Bennett ,
B.V. Shanabrook ,
E.R. Glaser  and
R.J. Wagner
Brian R. Bennett
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5347
B.V. Shanabrook
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5347
E.R. Glaser
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5347
R.J. Wagner
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5347
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Abstract

The presence of two species of both cations and anions permits the construction of InAs/AlSb heterostructures with either AlAs- or InSb-like interfaces. InAs/AlSb superlattices with both types of interfaces were grown using migration-enhanced epitaxial techniques. The layer quality and control of interfacial composition were confirmed by x-ray diffraction, Raman spectroscopy, and photoluminescence measurements. We demonstrate that high-quality superlattices with both InSb- and AlAs-bonded interfaces can be achieved with appropriate growth temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 253
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1] Soderstrom, J.R., Chow, D.H., and McGill, T.C., J. Appl. Phys. 66, 5106 (1989).Google Scholar
[2] Werking, J.D., Bolognesi, C.R., Chang, L.D., Nguyen, C., Hu, E.L., and Kroemer, H., IEEE Electron Dev. Lett. 13, 164 (1992).Google Scholar
[3] Tuttle, G., Kroemer, H., and English, J.H., J. Appl. Phys. 67, 3032 (1990).Google Scholar
[4] Yano, M., Okuizumi, M., Iwai, Y., and Inoue, M., J. Appl. Phys. 74, 7472 (1993).Google Scholar
[5] Brar, B., Kroemer, H., Ibbetson, J., and English, J.H., Appl. Phys. Lett. 62, 3303 (1993).Google Scholar
[6] Spitzer, J., Fuchs, H.D., Etchegoin, P., Ilg, M., Cardona, M., Brar, B., and Kroemer, H., Appl. Phys. Lett. 62, 2274 (1993).Google Scholar
[7] Shanabrook, B.V., Waterman, J.R., Davis, J.L., and Wagner, R.J., Appl. Phys. Lett. 61, 2338 (1992).Google Scholar
[8] Chow, D.H., Miles, R.H., and Hunter, A.T., J. Vac. Sci. Technol. B10, 888 (1992).Google Scholar
[9] Bennett, B.R., Shanabrook, B.V., and Glaser, E.R., submitted to Appl. Phys. Lett. Google Scholar
[10] Dandrea, R.G. and Duke, C.B., Appl. Phys. Lett. 63, 1795 (1993).Google Scholar
[11] Waterman, J.R., Shanabrook, B.V., Wagner, R.J., Yang, M.J., Davis, J.L., and Omaggio, J.P., Semicond.Sci. Technol. 8, S106 (1993).Google Scholar
[12] Fasolino, A., Molinari, E., and Maan, J.C., Phys. Rev. B 39, 3923 (1989).Google Scholar
[13] Bennett, B.R., Shanabrook, B.V., Wagner, R.J., Davis, J.L., and Waterman, J.R., Appl. Phys. Lett. 63, 949 (1993).Google Scholar
[14] Shanabrook, B.V., Bennett, B.R., and Wagner, R.J., Phys. Rev. B 48, 17172 (1993).Google Scholar
[15] Sela, I., Bolognesi, C.R., and Kroemer, H., Phys. Rev. B 46, 16142 (1992).Google Scholar
[16] Shanabrook, B.V. and Bennett, B.R., submitted to Phys. Rev. B Google Scholar
[17] Sela, I., Bolognesi, C.R., Somoska, L.A., and Kroemer, H., Appl. Phys. Lett. 60, 3283 (1992).Google Scholar
[18] Iwai, Y., Yano, M., Hagiwara, R., and Inoue, M., Surface Science 267, 434 (1992).Google Scholar
[19] Seta, M., Asahi, H., Kim, S.G., Asami, K., and Gonda, S., J. Appl. Phys. 74, 5033 (1993).Google Scholar