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High-Pressure Pulsed Plasma Synthesis of Carbon-Nitride Thin Films

Published online by Cambridge University Press:  21 February 2011

V. N. Gurarie
Affiliation:
School of Physics, University of Melbourne, Parkville, VIC, 3052, australia
A. V. Orlov
Affiliation:
School of Physics, University of Melbourne, Parkville, VIC, 3052, australia
L. A Bursill
Affiliation:
School of Physics, University of Melbourne, Parkville, VIC, 3052, australia
Peng JuLin
Affiliation:
School of Physics, University of Melbourne, Parkville, VIC, 3052, australia
K. W. Nugent
Affiliation:
School of Physics, University of Melbourne, Parkville, VIC, 3052, australia
S. Prawer
Affiliation:
School of Physics, University of Melbourne, Parkville, VIC, 3052, australia
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Abstract

In this study a high N2 pressure has been used to enhance the N incorporation into CN films produced by a shock plasma deposition method. auger spectroscopy indicates that increasing the nitrogen pressure from 0.1 atm to 10 atm results in an increase of nitrogen incorporation into CN films to a maximum of 43 at.%. Nitrogen distribution varies across the surface of the deposit, showing an increase of nitrogen content with depth in the center of the deposition and a decrease with depth at points away from the center. SEM and optical microscopy indicate that under increased nitrogen pressure the grain structure becomes finer. Raman spectra contain sharp peaks characteristic of a distinct crystalline CN phase. TEM diffraction patterns for the films produced under N2 pressure in the range of 0.05-0.1 atm unambiguously show the presence of micron-sized crystals displaying a cubic symmetry, and not the predicted β-Si3N4 type structure. PEELS data suggest that in the crystalline phase a significant fraction of the nitrogen atoms have sp2 trigonal bonds and there is a significant degree of sp3 character for the carbon atoms.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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