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High-Performance of Half-Heusler MNiSn (M=Hf,Zr) Single-Phase Thermoelectric Alloys Fabricated using Optical Floating Zone Melting

Published online by Cambridge University Press:  01 February 2011

Yoshisato Kimura ,
Tomoya Kuji ,
Akihisa Zama ,
Yasufumi Shibata  and
Yoshinao Mishima
Yoshisato Kimura
Affiliation:
kimurays@materia.titech.ac.jp, Tokyo Institute of Technology, Materials Science and Engineering, 4259-G3-23 Nagatsuta, Midori-ku, Yokohama, Kanagawa, 226-8502, Japan, +81-45-924-5495, +81-45-924-5495
Tomoya Kuji
Affiliation:
kuji_tomoya@hitachi-cable.co.jp, Japan
Akihisa Zama
Affiliation:
zama@materia.titech.ac.jp, Japan
Yasufumi Shibata
Affiliation:
shibata@win.tec.toyota.co.jp, Toyota Motor Corporation, Japan
Yoshinao Mishima
Affiliation:
mishima@materia.titech.ac.jp
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Abstract

We have succeeded to grow almost single-phase of Half-Heusler intermetallic compounds MNiSn, where M = (Hfx,Zr1−x) and x varies from 0 to 1, for the first time by directional solidification using optical floating zone melting (OFZ). Thermoelectric power and electrical resistivity can be dramatically improved since OFZ process effectively reduces solidification defects such as micro-cracks and cavities as well as unfavorable coexisting phases. Dimensionless thermoelectric figure of merit, ZT, of OFZ (Hf,Zr)NiSn alloys can be improved effectively by lowering the lattice thermal conductivity through the solid solution effects due to the substitution of Hf and Zr with each other. The maximum ZT value of 0.9 is achieved in (Hf0.5Zr0.5)NiSn at 963 K.

Keywords

thermoelectricityelectrical propertiescrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 886: Symposium F – Materials and Technologies fore Direct Thermal-to-Electric Energy Conversion , 2005 , 0886-F09-02
Copyright
Copyright © Materials Research Society 2006

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References

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