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Highly Reliable Operation of InGaAlAs MESA-Waveguide Photodiodes in Humid Ambient

Published online by Cambridge University Press:  10 February 2011

Hitoshi Nakamura
Hitoshi Nakamura*
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji-shi 185, Japan.
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Abstract

Reliability of lnGaAlAs mesa-waveguide photodiodes suitable for low-cost surface integration modules applied to access network systems is investigated. A passivation technique including silicone-based polymer encapsulation was used to ensure high reliability. Under a non-humidity condition of 200°C/10 V, a 9,600-hour stable operation was observed, and the estimated median lifetime is more than 100 years at the field service temperature of 85°C. A measured slight change in the dark current is explained in terms of hole accumulation at the semiconductor-insulator interface. Under a humid condition of 85°C/85% RH/10 V, there was no change in the dark current over 10,000 hours. The observed median lifetime at 135°C/85% RH/10 V of 1,500 hours would lead to an estimated median lifetime at 45°C/50% RH of about 50 years. These results suggest that the WG-PD is applicable to low-cost non-hermetic optical modules for optical access networks.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 531: Symposium DD – Reliabilty of Photonics Materials & Structures , 1998 , 317
Copyright
Copyright © Materials Research Society 1998

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