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Highly p-Type a-GaN Grown on r-Plane Sapphire Substrate

Published online by Cambridge University Press:  01 February 2011

Yosuke Tsuchiya ,
Yoshizane Okadome ,
Hiroko Furukawa ,
Akira Honshio ,
Yasuto Miyake ,
Takeshi Kawashima ,
Motoaki Iwaya ,
Satoshi Kamiyama ,
Hiroshi Amano  and
Isamu Akasaki
Yosuke Tsuchiya
Affiliation:
m0534015@ccmailg.meijo-u.ac.jp, MeijoUniversity, Department of Materials Science and Engineering, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, N/A, 468-8502, Japan, +81-52-832-1151, +81-52-832-1298
Yoshizane Okadome
Affiliation:
m0534008@ccmailg.meijo-u.ac.jp
Hiroko Furukawa
Affiliation:
m0534028@ccmailg.meijo-u.ac.jp
Akira Honshio
Affiliation:
m0434036@ccmailg.meijo-u.ac.jp
Yasuto Miyake
Affiliation:
m0434041@ccmailg.meijo-u.ac.jp
Takeshi Kawashima
Affiliation:
m0541504@ccmailg.meijo-u.ac.jp
Motoaki Iwaya
Affiliation:
iwaya@ccmfs.meijo-u.ac.jp
Satoshi Kamiyama
Affiliation:
skami@ccmfs.meijo-u.ac.jp
Hiroshi Amano
Affiliation:
amano@ccmfs.meijo-u.ac.jp
Isamu Akasaki
Affiliation:
akasaki@ccmfs.meijo-u.ac.jp
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Abstract

Mg-doped p-type a-plane GaN films were grown on unintentionally doped a-plane GaN templates by metalorganic vapor phase epitaxy (MOVPE). The Mg concentration in a-plane GaN increased with increasing Mg source gas flow rate. A maximum hole concentration of 2.0 × 1018 cm-3 with a hole mobility of 4.5 cm2/Vs and resistivity of 0.7 Ω·cm were achieved. The activation ratio was 5.0 × 10-2. It was found that a maximum hole concentration in p-type a-plane GaN was higher than that in p-type c-plane GaN. The activation energy of Mg acceptors in p-type a-plane GaN with the maximum hole concentration was found to be 118 meV by temperature-dependent Hall-effect measurement.

Keywords

nitrideHall effectcrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF17-06
Copyright
Copyright © Materials Research Society 2006

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References

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