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Highly Oriented Diamond Films Grown at High Growth Rate

Published online by Cambridge University Press:  01 February 2011

Xianglin Li ,
Ramon Collazo  and
Zlatko Sitar
Xianglin Li
Affiliation:
xli9@ncsu.edu, North Carolina State University, Materials Science and Engineering, 1001 Capability Dr., RM 221, Raleigh, NC, 27606, United States, 919-515-6177, 919-515-3419
Ramon Collazo
Affiliation:
rcollaz@unity.ncsu.edu, North Carolina State University, Materials Science and Engineering, Raleigh, NC, 27606, United States
Zlatko Sitar
Affiliation:
sitar@ncsu.edu, North Carolina State University, Materials Science and Engineering, Raleigh, NC, 27606, United States
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Abstract

Highly oriented diamond (HOD) films were grown at a high growth rate on (100) silicon substrates by microwave plasma chemical vapor deposition (MPCVD), following the standard bias-enhanced nucleation (BEN) process. The growth rate and diamond quality were investigated as a function of methane concentration in hydrogen (2-6%), and N2/CH4 ratio (0 to 0.12). A four-fold increase in the growth rate of HOD films and a three times faster expansion and coalescence of (100) facets was observed within the above process window. The films with the best quality were grown under an N2/CH4 ratio of 0.08 at methane concentration of 3.5%. The ratio of x-ray intensity between the first order twins and {111} poles was only 1%. A detailed study of the crystalline quality and phase purity as a function of methane concentration and nitrogen addition is presented.

Keywords

diamondfilmplasma-enhanced CVD (PECVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 956: Symposium J – Diamond Electronics—Fundamentals to Applications , 2006 , 0956-J09-39
Copyright
Copyright © Materials Research Society 2007

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References

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