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Highly Doped P-Type, N-Type CdS Thin Films and Diodes
Published online by Cambridge University Press: 15 February 2011
Abstract
CdS thin films with doping concentration as high as 1017 cm-3 for p-type or 1021 cm-3 for n-type were achieved by pulsed excimer laser deposition without any post-annealing process. These films were grown on InP or GaAs substrates with good crystalline quality. By using this technique, CdS thin film p-n junctions were produced successfully.
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- Copyright © Materials Research Society 1994