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Highly Doped P-Type and N-Type ZnS, ZnSe, CdS and CdSe Thin Films Growth by Pulsed Laser Deposition

Published online by Cambridge University Press:  22 February 2011

Wenpin P. Shen  and
Hoi S. Kwok
Wenpin P. Shen
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Amherst, NY 14260
Hoi S. Kwok
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Amherst, NY 14260 Department of Electrical and Electronics Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong
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Abstract

ZnS, ZnSe, CdS and CdSe thin films were grown on InP or GaAs substrates with high ptype and n-type doping concentrations by pulsed excimer laser deposition without any postannealing processing. The x-ray diffraction results showed that these thin films were fully epitaxial (in-plane aligned). These high quality films are suitable for use as optoelectronic devices which will operate in the visible region of the spectrum.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 457
Copyright
Copyright © Materials Research Society 1994

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