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Highly Conductive and Wide Band GaP Microcrystalline Silicon Films Prepared by Photochemical Vapor Deposition and Applications to Devices

Published online by Cambridge University Press:  28 February 2011

S. Nishida ,
H. Tasaki ,
M. Konagai  and
K. Takahashi
S. Nishida
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, Ohokayama, Meguro-ku, Tokyo 152, Japan
H. Tasaki
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, Ohokayama, Meguro-ku, Tokyo 152, Japan
M. Konagai
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, Ohokayama, Meguro-ku, Tokyo 152, Japan
K. Takahashi
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, Ohokayama, Meguro-ku, Tokyo 152, Japan
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Abstract

Doped hydrogenated microcrystalline silicon (μc-Si:H) and fluorinated hydrogenated microcrystalline (μc-Si:F:H) films were prepared by the mercury photosensitized decomposition of a disilane-hydrogen or a difluorosilane-hydrogen gas mixture, respectively. The maximum dark conductivity and optical band gap of μc-Si:H films were respectively 20 S•cm−1 and ∼2.0 eV for n-type and 1 S•cm−1 and 2.3 eV for p-type. A higher dark conductivity as much as 50 S•cm−1 and a wide gap of 2.0 eV were obtained for n-type μc-Si:F:H. It is most significant that the gaseous ratio of hydrogen to disilane should be enhanced to obtain such a highly conductive and wide gap film. The crystallinity of the photo-deposited μc-Si:H films appeared to be improved in comparison with that of films by the conventional plasma glow discharge technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 47
Copyright
Copyright © Materials Research Society 1985

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